vishay gmf05lc - hs3 document number 85655 rev. 3, 02-jun-03 vishay semiconductors www.vishay.com 1 6 5 4 1 2 3 pin 1 top view 16905 low capacitance esd protection diode array features ? transient protection for data lines as per iec 61000 - 4 - 2 (esd) 15 kv (air), 8 kv (contact) iec 61000 - 4 - 5 (lightning) 5 a (tp = 8/20 s) small package for use in portable electronics bidirectional protection of 4 i/o lines unidirectional protection of 5 i/o lines low leakage current ideal for cellular handsets, cordless phones, notebooks, handhelds and digital cameras space saving liliput package mechanical data case: llp75-6a plastic package molding compound flammability rating: ul 94 v-0 terminals: high temperature soldering guaranteed: 260 c/10 sec. at terminals weight: 5 mg parts table absolute maximum ratings ratings at 25 c, ambient temperature unless otherwise specified thermal characteristics ratings at 25 c, ambient temperature unless otherwise specified electrical characteristics ratings at 25 c, ambient temperature unless otherwise specified part ordering code marking remarks GMF05LC-HS3 GMF05LC-HS3-gs08 f6 tape and reel parameter te s t c o n d i t i o n symbol value unit peak pulse power 8/20 s waveform p ppm 70 w peak pulse current 8/20 s waveform i pp 5 a parameter tes t co nd iti on symbol value unit operating temperature t j - 55 to + 125 c storage temperature t stg - 55 to + 150 c parameter tes t co nd iti on symbol min typ. max unit reverse stand-off voltage v rwm 5 v reverse breakdown voltage i t = 1 ma v br 6 v reverse leakage current v rwm = 5 v i r 3 a clamping voltage i pp = 1 a, 8/20 s waveform v c 9.5 v i pp = 5 a, 8/20 s waveform v c 12.5 v peak forward voltage i f = 1 a, 8/20 s waveform v f 1.5 v junction capacitance between i/ o pins and gnd v r = 0 v, f = 1 mhz c j 50 pf
www.vishay.com 2 document number 85655 rev. 3, 02-jun-03 vishay gmf05lc - hs3 vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) figure 1. non -repetitive peak pulse power vs. pulse time figure 2. pulse derating curve figure 3. pulse waveform p ppm - peak pulse power (kw) 0.1 1 10 0.1 1.0 10 td - pulse duration ( s) 100 1000 0.01 gGMF05LC-HS3_01 0 25 50 75 100 0 75 25 50 100 125 150 175 peak pulse power (p pp ) or current (i pp ) derating in percentage, % t a - ambient t emperature ( c) gGMF05LC-HS3_02 0 50 100 90 80 70 60 40 30 20 10 110 i ppm - peak pulse current, % i rsm pulse width (td) is defined as the point where the peak current decays to 50% of i ppm 0 10 5 15 20 30 25 t- time ( s) t d = i pp 2 gGMF05LC-HS3_03 figure 4. clamping voltage vs. peak pulse current 0 2 1 34 6 5 gGMF05LC-HS3_04 2 4 6 8 10 12 14 v c - clamping voltage (v) i pp - peak pulse current (a)
vishay gmf05lc - hs3 document number 85655 rev. 3, 02-jun-03 vishay semiconductors www.vishay.com 3 package dimensions in mm 18058 iso method e
www.vishay.com 4 document number 85655 rev. 3, 02-jun-03 vishay gmf05lc - hs3 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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